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T1G6000528-Q3

Manufacturer: TriQuint Semiconductor

T1G6000528-Q3 datasheet by TriQuint Semiconductor.

T1G6000528-Q3 datasheet preview

T1G6000528-Q3 Datasheet Details

Part number T1G6000528-Q3
Datasheet T1G6000528-Q3_TriQuintSemiconductor.pdf
File Size 1.62 MB
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
T1G6000528-Q3 page 2 T1G6000528-Q3 page 3

T1G6000528-Q3 Overview

5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo .DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which.

T1G6000528-Q3 Key Features

  • Frequency: DC to 6 GHz
  • Linear Gain: >10 dB at 6 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): >7 W at 6 GHz
  • Lead-free and RoHS pliant
  • Low thermal resistance package
  • http://..co.kr/
TriQuint Semiconductor logo - Manufacturer

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