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T1G6000528-Q3 - GaN RF Power Transistor

Datasheet Summary

Description

General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.

Features

  • Frequency: DC to 6 GHz.
  • Linear Gain: >10 dB at 6 GHz.
  • Operating Voltage: 28 V.
  • Output Power (P3dB): >7 W at 6 GHz.
  • Lead-free and RoHS compliant.
  • Low thermal resistance package Package Information Package Type Q3.

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Datasheet Details

Part number T1G6000528-Q3
Manufacturer TriQuint Semiconductor
File Size 1.62 MB
Description GaN RF Power Transistor
Datasheet download datasheet T1G6000528-Q3 Datasheet
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Full PDF Text Transcription

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T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers –– Test instrumentation –– Cellular infrastructure Available Package Product Features • Frequency: DC to 6 GHz • Linear Gain: >10 dB at 6 GHz • Operating Voltage: 28 V • Output Power (P3dB): >7 W at 6 GHz • Lead-free and RoHS compliant • Low thermal resistance package Package Information Package Type Q3 Description 5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo www.DataSheet.
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